NP109N04PUG-E1-AY
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- Mfr.Part #
- NP109N04PUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 110A TO263-3
- Stock
- 23,957
- In Stock ：
- 23,957
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0023Ohm
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Rise Time :
- 35ns
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 440A
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Fall Time (Typ) :
- 35 ns
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 55A, 10V
- Turn-Off Delay Time :
- 90 ns
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Continuous Drain Current (ID) :
- 110A
- Drain to Source Voltage (Vdss) :
- 40V
- Factory Lead Time :
- 16 Weeks
- Turn On Delay Time :
- 47 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- 175°C TJ
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 15750pF @ 25V
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 40V
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.8W Ta 220W Tc
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2007
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Datasheets
- NP109N04PUG-E1-AY
N-Channel Tape & Reel (TR) 2.3m Ω @ 55A, 10V ±20V 15750pF @ 25V 270nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP109N04PUG-E1-AY Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 15750pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.It is [90 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 440A.A turn-on delay time of 47 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
NP109N04PUG-E1-AY Features
a continuous drain current (ID) of 110A
the turn-off delay time is 90 ns
based on its rated peak drain current 440A.
a 40V drain to source voltage (Vdss)
NP109N04PUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP109N04PUG-E1-AY applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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