NE5520379A-T1A-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - RF

Min Operating Temperature :

-65°C

Frequency :

915MHz

Power Gain :

16dB

Max Operating Temperature :

125°C

Number of Elements :

1

Gate to Source Voltage (Vgs) :

5V

Number of Pins :

4

RoHS Status :

RoHS Compliant

Transistor Type :

LDMOS

Voltage - Test :

3.2V

Min Breakdown Voltage :

15V

Packaging :

Cut Tape (CT)

Base Part Number :

NE55203

Package / Case :

4-SMD, Flat Leads

Mount :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

20W

Max Power Dissipation :

20W

Power - Output :

35.5dBm

Continuous Drain Current (ID) :

1.5A

Drain to Source Breakdown Voltage :

15V