NDT2955

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

300m Ω @ 2.5A, 10V

Drain to Source Breakdown Voltage :

-60V

Power Dissipation :

3W

Operating Mode :

ENHANCEMENT MODE

Height :

1.8mm

Contact Plating :

Tin

Turn-Off Delay Time :

19 ns

Resistance :

300mOhm

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Current Rating :

-2.5A

Length :

6.5mm

Weight :

250.2mg

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Number of Pins :

4

Package / Case :

TO-261-4, TO-261AA

Turn On Delay Time :

12 ns

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Number of Elements :

1

Published :

2002

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mount :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

601pF @ 30V

Element Configuration :

Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

4

Gate to Source Voltage (Vgs) :

20V

Width :

3.56mm

Voltage - Rated DC :

-60V

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

-2.6 V

Fall Time (Typ) :

6 ns

Dual Supply Voltage :

60V

Number of Channels :

1

FET Type :

P-Channel

Continuous Drain Current (ID) :

2.5A

Power Dissipation-Max :

3W Ta

Threshold Voltage :

2.6V