NDPL100N10BG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 50A, 15V

Terminal Position :

Single

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Turn-Off Delay Time :

68 ns

Transistor Application :

SWITCHING

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

147 mJ

Factory Lead Time :

6 Weeks

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Rise Time :

385ns

Fall Time (Typ) :

52 ns

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Operating Temperature :

175°C TJ

Turn On Delay Time :

40 ns

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

2.1W Ta 110W Tc

Number of Pins :

3

Vgs (Max) :

±20V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V 15V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

100A

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

400A

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.0087Ohm