NDP7060
- Mfr.Part #
- NDP7060
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A TO220-3
- Stock
- 25,438
- In Stock :
- 25,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Number of Terminations :
- 3
- Published :
- 1998
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 225A
- Factory Lead Time :
- 9 Weeks
- Threshold Voltage :
- 2.8V
- Fall Time (Typ) :
- 90 ns
- Turn On Delay Time :
- 17 ns
- Weight :
- 1.8g
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 75A
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 40A, 10V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 150W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Current Rating :
- 75A
- Voltage - Rated DC :
- 60V
- Avalanche Energy Rating (Eas) :
- 550 mJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Power Dissipation :
- 150W
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Rise Time :
- 128ns
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Turn-Off Delay Time :
- 54 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Nominal Vgs :
- 2.8 V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~175°C TJ
- Vgs (Max) :
- ±20V
- Width :
- 4.7mm
- Resistance :
- 13mOhm
- Height :
- 16.3mm
- Length :
- 10.67mm
- Datasheets
- NDP7060
NDP7060 Documents

N-Channel Tube 13m Ω @ 40A, 10V ±20V 3600pF @ 25V 115nC @ 10V TO-220-3
NDP7060 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 550 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Its maximum pulsed drain current is 225A, which is also its maximum rating peak drainage current.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.8V.Its overall power consumption can be reduced by using drive voltage (10V).
NDP7060 Features
-
the avalanche energy rating (Eas) is 550 mJ
-
a continuous drain current (ID) of 75A
-
a drain-to-source breakdown voltage of 60V voltage
-
the turn-off delay time is 54 ns
-
based on its rated peak drain current 225A.
-
a threshold voltage of 2.8V
NDP7060 Applications
There are a lot of ON Semiconductor NDP7060 applications of single MOSFETs transistors.
-
DC/DC converters
-
LCD/LED/ PDP TV Lighting
-
Motor Drives and Uninterruptible Power Supples
-
LCD/LED TV
-
Consumer Appliances
-
Server power supplies
-
Industrial Power Supplies
-
Synchronous Rectification
-
Motor control
-
Synchronous Rectification for ATX 1 Server I Telecom PSU
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