NDF11N50ZH

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1645pF @ 25V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Drain to Source Voltage (Vdss) :

500V

Factory Lead Time :

13 Weeks

Mounting Type :

Through Hole

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation-Max :

39W Tc

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

420 mJ

Number of Pins :

3

DS Breakdown Voltage-Min :

500V

Continuous Drain Current (ID) :

12A

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Pulsed Drain Current-Max (IDM) :

44A

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Radiation Hardening :

No

Published :

2010

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

23 ns

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

40 ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.52Ohm

Package / Case :

TO-220-3 Full Pack

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

520m Ω @ 4.5A, 10V

Number of Elements :

1

Element Configuration :

Single

Case Connection :

Isolated

FET Type :

N-Channel

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Transistor Element Material :

SILICON

Pin Count :

3

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

32ns

Lead Free :

Lead Free