NDF05N50ZH

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 25V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

5.5A

FET Type :

N-Channel

Power Dissipation-Max :

30W Tc

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

500V

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

RoHS Status :

RoHS Compliant

Pin Count :

3

Mounting Type :

Through Hole

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Rise Time :

15ns

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

24 ns

Surface Mount :

No

Vgs (Max) :

±30V

Element Configuration :

Single

Packaging :

Tube

Radiation Hardening :

No

ECCN Code :

EAR99

Power Dissipation :

30W

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

14 ns

Number of Terminations :

3