NDB7051

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

50V

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.013Ohm

Pin Count :

3

Terminal Finish :

TIN LEAD

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

210A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

50V

Number of Elements :

1

Number of Terminations :

2

Vgs (Max) :

±20V

Surface Mount :

yes

Terminal Position :

Single

Terminal Form :

Gull wing

Power Dissipation-Max :

130W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

Operating Temperature :

-65°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1.93pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

70A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

13m Ω @ 35A, 10V

Mounting Type :

Surface Mount