NCP5111DR2G
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- Mfr.Part #
- NCP5111DR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 21,492
- In Stock ：
- 21,492
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- Manufacturer :
- onsemi
- Product Category :
- Gate Drivers
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Supply Voltage :
- 15V
- Output Current Flow Direction :
- SOURCE SINK
- Lead Free :
- Lead Free
- Operating Temperature :
- -40°C~125°C TJ
- Built-in Protections :
- UNDER VOLTAGE
- Output Voltage :
- 20V
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- REACH SVHC :
- No SVHC
- Channel Type :
- SYNCHRONOUS
- Pin Count :
- 8
- Turn-Off Delay Time :
- 170 ns
- Rise / Fall Time (Typ) :
- 85ns 35ns
- Voltage - Supply :
- 10V~20V
- Terminal Form :
- Gull wing
- Width :
- 4mm
- Number of Functions :
- 1
- Factory Lead Time :
- 4 Weeks
- Input Type :
- Non-Inverting
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- Driven Configuration :
- Half-Bridge
- Terminal Position :
- Dual
- Nominal Supply Current :
- 5mA
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Base Part Number :
- NCP5111
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Logic Voltage - VIL, VIH :
- 0.8V 2.3V
- Published :
- 2008
- Turn Off Time :
- 0.17 µs
- Gate Type :
- IGBT, N-Channel MOSFET
- Max Output Current :
- 500mA
- Number of Terminations :
- 8
- Number of Pins :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Supplies :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Drivers :
- 2
- Fall Time (Typ) :
- 75 ns
- Length :
- 5mm
- Max Supply Current :
- 5mA
- Turn On Delay Time :
- 1.17 μs
- Rise Time :
- 160ns
- Pbfree Code :
- yes
- High Side Voltage - Max (Bootstrap) :
- 600V
- Termination :
- SMD/SMT
- Datasheets
- NCP5111DR2G
Gate Drivers onsemi NCP5111DR2G Overview
The onsemi NCP5111DR2G is a robust and high-performance IC gate driver designed to cater to the demanding requirements of half-bridge power architectures. This driver integrates powerful features into an 8SOIC package, making it ideal for streamlined, high-density installations. Key aspects of this product include high peak output currents and optimized dead-time control, which facilitate improved efficiency and reliability in system operations. This Gate Drivers onsemi NCP5111DR2G device is particularly well-suited for applications requiring efficient switching performance in a compact footprint.
NCP5111DR2G Features
The NCP5111DR2G offers a range of features designed to enhance its functionality and performance in various applications. These include dual outputs for driving both high-side and low-side MOSFETs, a high peak output current capability that ensures reliable operation even under stressful conditions, and a wide supply voltage range. Additionally, its built-in undervoltage lockout and thermal shutdown features add an extra layer of protection, ensuring safe and continuous operation.
NCP5111DR2G Applications
- DC-DC Converters: Utilizes its high peak current and dual-output capability to efficiently manage the switching of power MOSFETs, enhancing converter reliability and performance.
- Motor Control Systems: Employs robust drive characteristics to control motor driver MOSFETs in applications ranging from consumer electronics to industrial automation, ensuring precise and safe motor operations.
- Renewable Energy Systems: Supports solar inverters and wind turbine converters by delivering reliable and efficient gate driving, crucial for long-term energy conversion stability and efficiency.
- Power Supply Units: Ideal for driving MOSFETs in power supplies, where stable and robust gate driving enhances overall power supply efficiency and reliability.
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