MVSF2N02ELT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

6 ns

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 5V

Vgs (Max) :

±8V

DS Breakdown Voltage-Min :

20V

Factory Lead Time :

2 Weeks

Power Dissipation-Max :

1.25W Ta

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.6A, 4.5V

Continuous Drain Current (ID) :

2.8A

Published :

2014

Drain-source On Resistance-Max :

0.085Ohm

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

5A

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

1.437803g

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Surface Mount :

yes

Turn-Off Delay Time :

28 ns

Mounting Type :

Surface Mount

Rise Time :

95ns

Pbfree Code :

yes

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Number of Pins :

3

Fall Time (Typ) :

125 ns

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.95

Number of Elements :

1

Pin Count :

3

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Number of Terminations :

3