MTM861280LBF
- Mfr.Part #
- MTM861280LBF
- Manufacturer
- Panasonic
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1A WSSMINI6-F1
- Stock
- 8,735
- In Stock :
- 8,735
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2009
- Nominal Vgs :
- -1 V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Turn-Off Delay Time :
- 17 ns
- Height :
- 480μm
- Number of Terminations :
- 6
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 500mA, 4V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 540mW Ta
- Drain Current-Max (Abs) (ID) :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 1.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 12V
- Factory Lead Time :
- 10 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- Vgs (Max) :
- ±12V
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Power Dissipation :
- 540mW
- Input Capacitance (Ciss) (Max) @ Vds :
- 80pF @ 10V
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Continuous Drain Current (ID) :
- -1A
- Operating Temperature :
- 150°C TJ
- Length :
- 1.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4V
- Drain to Source Breakdown Voltage :
- -20V
- Terminal Position :
- Dual
- Package / Case :
- 6-SMD, Flat Leads
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Datasheets
- MTM861280LBF

P-Channel Tape & Reel (TR) 420m Ω @ 500mA, 4V ±12V 80pF @ 10V 20V 6-SMD, Flat Leads
MTM861280LBF Overview
The maximum input capacitance of this device is 80pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 17 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4V), this device helps reduce its power consumption.
MTM861280LBF Features
a continuous drain current (ID) of -1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 17 ns
a 20V drain to source voltage (Vdss)
MTM861280LBF Applications
There are a lot of Panasonic Electronic Components
MTM861280LBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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