MTM231232LBF
- Mfr.Part #
- MTM231232LBF
- Manufacturer
- Panasonic
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A SMINI3-G1-B
- Stock
- 37,194
- In Stock :
- 37,194
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SC-70, SOT-323
- Base Part Number :
- MTM231232
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 10V
- Reach Compliance Code :
- Unknown
- Weight :
- 6.208546mg
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Length :
- 2mm
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Vgs(th) (Max) @ Id :
- 1.3V @ 1mA
- Fall Time (Typ) :
- 70 ns
- Number of Pins :
- 3
- Width :
- 1.25mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 25 ns
- DS Breakdown Voltage-Min :
- 20V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±10V
- Number of Channels :
- 1
- Power Dissipation-Max :
- 500mW Ta
- Height :
- 800μm
- Continuous Drain Current (ID) :
- -3A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.055Ohm
- Published :
- 2014
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 20V
- Rise Time :
- 25ns
- Gate to Source Voltage (Vgs) :
- 10V
- Turn-Off Delay Time :
- 120 ns
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 1A, 4V
- Datasheets
- MTM231232LBF

P-Channel Tape & Reel (TR) 55m Ω @ 1A, 4V ±10V 1000pF @ 10V 20V SC-70, SOT-323
MTM231232LBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1000pF @ 10V.This device conducts a continuous drain current (ID) of -3A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 120 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
MTM231232LBF Features
a continuous drain current (ID) of -3A
the turn-off delay time is 120 ns
a 20V drain to source voltage (Vdss)
MTM231232LBF Applications
There are a lot of Panasonic Electronic Components
MTM231232LBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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