MTD20P06HDLT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

300 mJ

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

60V

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 5V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

175m Ω @ 7.5A, 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

FET Type :

P-Channel

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.175Ohm

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation-Max :

72W Tc

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

15A

Vgs (Max) :

±15V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Published :

2004

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

45A