MT47H64M16BT-37E:A
- Mfr.Part #
- MT47H64M16BT-37E:A
- Manufacturer
- Micron Technology
- Package / Case
- 92-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 92FBGA
- Stock
- 33,254
- In Stock :
- 33,254
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Operating Mode :
- SYNCHRONOUS
- Address Bus Width :
- 16b
- Data Bus Width :
- 16b
- Supply Current-Max :
- 0.34mA
- Clock Frequency :
- 267MHz
- JESD-609 Code :
- e1
- Packaging :
- Box
- Supply Voltage-Min (Vsup) :
- 1.7V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Lead Free :
- Lead Free
- Number of Functions :
- 1
- Memory Size :
- 1Gb 64M x 16
- Sequential Burst Length :
- 48
- Published :
- 2006
- Output Characteristics :
- 3-STATE
- Number of Ports :
- 1
- Terminal Pitch :
- 0.8mm
- Surface Mount :
- yes
- Interleaved Burst Length :
- 48
- Organization :
- 64MX16
- Density :
- 1 Gb
- Qualification Status :
- Not Qualified
- HTS Code :
- 8542.32.00.32
- Supply Voltage :
- 1.8V
- Length :
- 19mm
- Operating Supply Voltage :
- 1.8V
- Terminal Position :
- BOTTOM
- Memory Format :
- DRAM
- Number of Pins :
- 92
- Memory Type :
- Volatile
- Memory Width :
- 16
- Mounting Type :
- Surface Mount
- Base Part Number :
- MT47H64M16
- Reach Compliance Code :
- Unknown
- Package / Case :
- 92-VFBGA
- Number of Terminations :
- 92
- Write Cycle Time - Word, Page :
- 15ns
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Interface :
- Parallel
- RoHS Status :
- ROHS3 Compliant
- Height Seated (Max) :
- 1.2mm
- I/O Type :
- COMMON
- Voltage - Supply :
- 1.7V~1.9V
- ECCN Code :
- EAR99
- Pin Count :
- 92
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Access Time :
- 400ps
- Operating Temperature :
- 0°C~85°C TC
- Standby Current-Max :
- 0.007A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Additional Feature :
- AUTO/SELF REFRESH
- Datasheets
- MT47H64M16BT-37E:A

Memory Micron Technology MT47H64M16BT-37E:A Overview
Introducing the Memory Micron Technology MT47H64M16BT-37E:A, a high-performance 1Gbit DRAM component from Micron Technology, designed to meet the demanding specifications of advanced memory requirements. This component, encased in a compact 92FBGA package, is engineered for optimal reliability and high-speed data processing capabilities. Its parallel interface ensures efficient communication and data transfer rates that are crucial for high-speed computing and digital processing environments. Ideal for manufacturers and B2B clients, this DRAM is built to support a wide range of applications where high memory bandwidth and density are required.
MT47H64M16BT-37E:A Features
The MT47H64M16BT-37E:A offers several key features that make it a standout choice for integrating into advanced electronic systems. These include a large 1Gbit storage capacity, a parallel interface for rapid data access and transfer, and a highly efficient 92FBGA packaging that minimizes space while maximizing thermal and electrical performance. The device's high-speed operation and reliability are tailored to meet the rigorous demands of contemporary digital applications.
MT47H64M16BT-37E:A Applications
- Smartphones and Tablets: Utilizes its high-speed data transfer capabilities to manage multiple applications simultaneously, enhancing device responsiveness and user experience.
- Computing Systems: Supports complex computing tasks by providing the necessary memory bandwidth to handle large datasets efficiently in desktops and laptops.
- Networking Equipment: Plays a critical role in managing data flow and storage in routers and switches, ensuring high-performance network management.
- Consumer Electronics: Integrated into devices such as smart TVs and gaming consoles to improve processing power and enhance multimedia playback and gaming experiences.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) to process real-time data, contributing to safer and smarter vehicle functionalities.
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