MT47H512M4EB-187E:C

Manufacturer :

Micron Technology

Product Category :

Memory

I/O Type :

COMMON

Packaging :

Tray

Length :

11.5mm

Number of Terminations :

60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Data Bus Width :

4B

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Refresh Cycles :

8192

Operating Supply Voltage :

1.8V

Density :

2 GB

Time@Peak Reflow Temperature-Max (s) :

30

Write Cycle Time - Word, Page :

15ns

Height Seated (Max) :

1.2mm

Number of Functions :

1

Memory Size :

2Gb 512M x 4

Memory Width :

4

Radiation Hardening :

No

Pbfree Code :

yes

Package / Case :

60-TFBGA

Supply Voltage :

1.8V

Voltage - Supply :

1.7V~1.9V

Organization :

512MX4

Base Part Number :

MT47H512M4

Clock Frequency :

533MHz

Output Characteristics :

3-STATE

Pin Count :

60

HTS Code :

8542.32.00.36

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

0°C~85°C TC

RoHS Status :

ROHS3 Compliant

Memory Type :

Volatile

Number of Ports :

1

Access Time :

350ps

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Sequential Burst Length :

48

Terminal Position :

BOTTOM

Published :

2012

Number of Pins :

60

Additional Feature :

AUTO/SELF REFRESH

Memory Interface :

Parallel

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Surface Mount :

yes

Address Bus Width :

18b

JESD-609 Code :

e1

ECCN Code :

EAR99

Max Frequency :

1.066GHz

Supply Voltage-Max (Vsup) :

1.9V