MT40A2G4WE-075E:B

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Mfr.Part #
MT40A2G4WE-075E:B
Manufacturer
Micron Technology
Package / Case
78-TFBGA
Datasheet
Download
Description
IC DRAM 8GBIT PARALLEL 78FBGA
Stock
31,888
In Stock :
31,888

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Manufacturer :
Micron Technology
Product Category :
Memory
Supply Voltage-Min (Vsup) :
1.14V
Height Seated (Max) :
1.2mm
Number of Functions :
1
Clock Frequency :
1.33GHz
Width :
8mm
Memory Type :
Volatile
Additional Feature :
AUTO/SELF REFRESH
Length :
12mm
Memory Size :
8Gb 2G x 4
Surface Mount :
yes
Terminal Pitch :
0.8mm
Package / Case :
78-TFBGA
Packaging :
Tray
Number of Terminations :
78
Terminal Position :
BOTTOM
Operating Mode :
SYNCHRONOUS
Memory Width :
4
JESD-30 Code :
R-PBGA-B78
Operating Temperature :
0°C~95°C TC
Organization :
2GX4
Access Mode :
MULTI BANK PAGE BURST
Voltage - Supply :
1.14V~1.26V
Factory Lead Time :
4 Weeks
Memory Density :
8589934592 bit
Reach Compliance Code :
Compliant
Mounting Type :
Surface Mount
Supply Voltage :
1.2V
Number of Ports :
1
Supply Voltage-Max (Vsup) :
1.26V
Memory Interface :
Parallel
Memory Format :
DRAM
Datasheets
MT40A2G4WE-075E:B
Introducing Memory Micron Technology MT40A2G4WE-075E:B from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:78-TFBGA, Number of Terminations:78, Operating Temperature:0°C~95°C TC, Mounting Type:Surface Mount, MT40A2G4WE-075E:B pinout, MT40A2G4WE-075E:B datasheet PDF, MT40A2G4WE-075E:B amp .Beyond Memory Micron Technology MT40A2G4WE-075E:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT40A2G4WE-075E:B


Memory Micron Technology MT40A2G4WE-075E:B Overview

The Memory Micron Technology MT40A2G4WE-075E:B is an integrated circuit that embodies state-of-the-art DRAM technology, encapsulated in a compact 78FBGA package. This 8Gb DRAM IC delivers high-speed data transfer and low power consumption, making it an ideal solution for applications demanding substantial memory capacity and speed. Engineered by Micron Technology, a leader in memory and storage solutions, this product offers reliability and performance, tailored to meet the stringent requirements of modern electronic systems. The efficient design and advanced technology enhance its suitability for high-performance computing environments and other memory-intensive applications.

MT40A2G4WE-075E:B Features

This DRAM IC features a parallel interface, providing robust speed capabilities and a simplified integration path into system designs. With a density of 8Gbit and a package size of 78FBGA, it offers a compact yet powerful memory solution suitable for dense modules. The MT40A2G4WE-075E:B operates at a standard voltage, facilitating energy efficiency without compromising performance, ideal for eco-conscious operations.

MT40A2G4WE-075E:B Applications

  • Enterprise Servers and Data Centers: Utilizes high-density and fast access to memory to manage large datasets and complex computations efficiently.
  • Networking Equipment: Supports the high-speed memory requirements needed for managing network traffic and buffering data in switches and routers.
  • Telecommunications Infrastructure: Used in telecommunications systems for fast data retrieval and storage, enhancing the reliability and efficiency of communications networks.
  • Gaming Consoles: Provides the extensive memory capacity required for high-resolution graphics and rapid game loading times.
  • Automotive Systems: Suitable for advanced driver-assistance systems (ADAS) which require quick access to memory for real-time processing.
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Shipping Cost

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