MT40A1G8WE-075E:D

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Mfr.Part #
MT40A1G8WE-075E:D
Manufacturer
Micron Technology
Package / Case
78-TFBGA
Datasheet
Download
Description
IC DRAM 8GBIT PARALLEL 78FBGA
Stock
15,781
In Stock :
15,781

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Manufacturer :
Micron Technology
Product Category :
Memory
Number of Ports :
1
Memory Density :
8589934592 bit
Memory Type :
Volatile
Voltage - Supply :
1.14V~1.26V
Additional Feature :
AUTO/SELF REFRESH
Organization :
1GX8
Number of Functions :
1
Memory Interface :
Parallel
Mounting Type :
Surface Mount
Supply Voltage :
1.2V
JESD-30 Code :
R-PBGA-B78
RoHS Status :
ROHS3 Compliant
Packaging :
Tray
Width :
8mm
Supply Voltage-Min (Vsup) :
1.14V
Memory Format :
DRAM
Operating Temperature :
0°C~95°C TC
Length :
12mm
Memory Width :
8
Factory Lead Time :
16 Weeks
Memory Size :
8Gb 1G x 8
Height Seated (Max) :
1.2mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Terminal Position :
BOTTOM
Package / Case :
78-TFBGA
Number of Terminations :
78
Supply Voltage-Max (Vsup) :
1.26V
Terminal Pitch :
0.8mm
Operating Mode :
SYNCHRONOUS
Surface Mount :
yes
Access Mode :
MULTI BANK PAGE BURST
Clock Frequency :
1.33GHz
Datasheets
MT40A1G8WE-075E:D
Introducing Memory Micron Technology MT40A1G8WE-075E:D from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:0°C~95°C TC, Package / Case:78-TFBGA, Number of Terminations:78, MT40A1G8WE-075E:D pinout, MT40A1G8WE-075E:D datasheet PDF, MT40A1G8WE-075E:D amp .Beyond Memory Micron Technology MT40A1G8WE-075E:D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT40A1G8WE-075E:D


Memory Micron Technology MT40A1G8WE-075E:D Overview

Introducing the cutting-edge memory solution from Micron Technology, the MT40A1G8WE-075E:D. Engineered with precision and reliability in mind, this integrated circuit DRAM boasts an impressive 8GBIT capacity, housed in a compact and durable 78FBGA package. Designed for optimal performance in demanding applications, it sets a new standard for memory efficiency and speed.

MT40A1G8WE-075E:D Features

  • High Capacity: With 8GBIT of memory, this IC DRAM provides ample storage space for a wide range of applications.
  • Parallel Architecture: The parallel architecture enhances data transfer rates, ensuring seamless performance even under heavy workloads.
  • Compact Form Factor: Housed in a 78FBGA package, this memory solution offers space-saving benefits without compromising on reliability.
  • Reliable Performance: Engineered by Micron Technology, renowned for its commitment to quality and durability, this memory module delivers consistent and dependable performance.

MT40A1G8WE-075E:D Applications

  • Data Centers: The MT40A1G8WE-075E:D is ideal for use in data centers, where high-capacity and high-speed memory is essential for processing large volumes of data efficiently. Whether it's for virtualization, cloud computing, or big data analytics, this memory solution ensures optimal performance and reliability.
  • Networking Equipment: In networking equipment such as routers, switches, and gateways, the MT40A1G8WE-075E:D plays a crucial role in facilitating fast and reliable data transmission. Its parallel architecture and compact form factor make it well-suited for integration into networking devices, enhancing their performance and efficiency.
  • Industrial Automation: In industrial automation systems, where reliability and ruggedness are paramount, the MT40A1G8WE-075E:D excels. Its high capacity and reliable performance make it suitable for use in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and other industrial control systems, ensuring smooth and efficient operation in demanding environments.
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