MSMBJ33CAE3

Manufacturer :

Microchip Technology

Product Category :

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Surface Mount

Peak Pulse Power :

600W

Diode Element Material :

SILICON

Published :

1997

Leakage Current :

1μA

Applications :

GENERAL PURPOSE

Package / Case :

DO-214AA, SMB

Terminal Form :

J BEND

Series :

Military, MIL-PRF-19500

Max Reverse Leakage Current :

1μA

Clamping Voltage :

53.3V

Peak Pulse Current :

11.3A

Polarity :

Bidirectional

Current - Peak Pulse (10/1000μs) :

11.3A

Pin Count :

2

Terminal Position :

Dual

Pbfree Code :

yes

Test Current :

1mA

Factory Lead Time :

13 Weeks

RoHS Status :

Non-RoHS Compliant

Reverse Breakdown Voltage :

36.7V

Mount :

Surface Mount

ECCN Code :

EAR99

Packaging :

Bulk

Number of Elements :

1

Reverse Standoff Voltage :

33V

Breakdown Voltage-Max :

40.6V

Terminal Finish :

Matte Tin (Sn) - annealed

Voltage - Reverse Standoff (Typ) :

33V

Additional Feature :

High Reliability

Type :

Zener

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Line Protection :

No

Direction :

Bidirectional

Number of Pins :

2

Number of Terminations :

2

Element Configuration :

Single

JESD-609 Code :

e3