MSMBJ33AE3

Manufacturer :

Microchip Technology

Product Category :

Diode Element Material :

SILICON

Clamping Voltage :

53.3V

Number of Elements :

1

Peak Pulse Power :

600W

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Additional Feature :

High Reliability

JESD-609 Code :

e3

ECCN Code :

EAR99

Package / Case :

DO-214AA, SMB

Mount :

Surface Mount

Applications :

GENERAL PURPOSE

Published :

1997

Terminal Finish :

Matte Tin (Sn) - annealed

Packaging :

Bulk

Number of Unidirectional Channels :

1

Series :

Military, MIL-PRF-19500

Element Configuration :

Single

Reverse Standoff Voltage :

33V

Factory Lead Time :

13 Weeks

Terminal Form :

J BEND

Type :

Zener

Direction :

Unidirectional

Leakage Current :

1μA

Max Reverse Leakage Current :

1μA

Reverse Breakdown Voltage :

36.7V

Peak Pulse Current :

11.3A

Breakdown Voltage-Max :

40.6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Position :

Dual

Current - Peak Pulse (10/1000μs) :

11.3A

Power Line Protection :

No

Polarity :

Unidirectional

Number of Pins :

2

Pbfree Code :

yes

Number of Terminations :

2

Mounting Type :

Surface Mount

Test Current :

1mA

Voltage - Reverse Standoff (Typ) :

33V

Pin Count :

2