MSD602-RT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pin Count :

3

hFE Min :

120

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

200mW

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Rated DC :

50V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Current Rating :

100mA

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Operating Temperature :

150°C TJ

Element Configuration :

Single

Terminal Form :

Gull wing

Radiation Hardening :

No

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 150mA 10V

Published :

2009

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

200mW

Terminal Position :

Dual

Max Breakdown Voltage :

50V