MSD601-RT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

200mW

Published :

2006

Pin Count :

3

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

60V

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA

Number of Pins :

3

Emitter Base Voltage (VEBO) :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MSD601

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Radiation Hardening :

No

hFE Min :

210

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Collector Emitter Saturation Voltage :

500mV

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

200mW

Factory Lead Time :

2 Weeks

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Min Operating Temperature :

-55°C

Number of Terminations :

3

Terminal Position :

Dual

Mounting Type :

Surface Mount

Current Rating :

100mA