MRF7S19100NBR1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

HTS Code :

8541.29.00.75

Published :

2009

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

65V

Number of Terminations :

4

JESD-609 Code :

e3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-272BB

Current - Test :

1A

JESD-30 Code :

R-PDFM-F4

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Power - Output :

29W

Frequency :

1.93GHz~1.99GHz

Operating Temperature (Max) :

225°C

Terminal Form :

Flat

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Voltage - Rated :

65V

Surface Mount :

yes

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Case Connection :

SOURCE

Voltage - Test :

28V

Configuration :

Single

Gain :

17.5dB

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant