MRF6V2150NBR5

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Gain :

25dB

JESD-30 Code :

R-PDFM-F4

DS Breakdown Voltage-Min :

110V

Published :

2006

JEDEC-95 Code :

TO-270AA

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Surface Mount :

yes

Case Connection :

SOURCE

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Voltage - Rated :

110V

Operating Temperature (Max) :

225°C

HTS Code :

8541.29.00.75

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

LDMOS

Number of Terminations :

4

Package / Case :

TO-272BB

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Power - Output :

150W

JESD-609 Code :

e3

Current - Test :

450mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

ECCN Code :

EAR99

Frequency :

220MHz

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

MRF6V2150

Terminal Form :

Flat

Terminal Position :

Dual