MRF6V2150NBR1
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- Mfr.Part #
- MRF6V2150NBR1
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-272BB
- Datasheet
- Download
- Description
- FET RF 110V 220MHZ TO-272-4
- Stock
- 45
- In Stock ：
- 45
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- JESD-30 Code :
- R-PDFM-F4
- Package / Case :
- TO-272BB
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature (Max) :
- 225°C
- Voltage - Test :
- 50V
- Transistor Type :
- LDMOS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Frequency :
- 220MHz
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Power - Output :
- 150W
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- MRF6V2150
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 110V
- Surface Mount :
- yes
- Case Connection :
- SOURCE
- HTS Code :
- 8541.29.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Flat
- Voltage - Rated :
- 110V
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Polarity/Channel Type :
- N-Channel
- Gain :
- 25dB
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Current - Test :
- 450mA
- Datasheets
- MRF6V2150NBR1
MRF6V2150NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF6V2150NBR1 Description
MRF6V2150NBR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6V2150NBR1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2150NBR1 has the common source configuration.
MRF6V2150NBR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6V2150NBR1 Applications
ISM applications
DC large signal applications
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