MRF1535FNT1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Terminal Position :

Dual

Frequency :

520MHz

ECCN Code :

EAR99

Case Connection :

SOURCE

Power - Output :

35W

Package / Case :

TO-272BA

Current Rating (Amps) :

6A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Flat

Configuration :

Single

Qualification Status :

Not Qualified

Operating Temperature (Max) :

200°C

Base Part Number :

MRF1535

Operating Mode :

ENHANCEMENT MODE

Voltage - Test :

12.5V

Surface Mount :

yes

JESD-30 Code :

R-PDFM-F6

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max (Abs) :

135W

Published :

2001

Current - Test :

500mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated :

40V

Drain Current-Max (Abs) (ID) :

6A

Gain :

13.5dB

Polarity/Channel Type :

N-Channel

Factory Lead Time :

10 Weeks

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Number of Elements :

1

Transistor Type :

LDMOS

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.75