MRF1511NT1
- Mfr.Part #
- MRF1511NT1
- Manufacturer
- NXP Semiconductors
- Package / Case
- PLD-1.5
- Datasheet
- Download
- Description
- FET RF 40V 175MHZ PLD-1.5
- Stock
- 16,180
- In Stock :
- 16,180
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- QUAD
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature (Max) :
- 150°C
- Surface Mount :
- yes
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 10 Weeks
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 4A
- Case Connection :
- SOURCE
- Frequency :
- 175MHz
- JESD-30 Code :
- R-PQSO-N4
- Gain :
- 13dB
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- NO LEAD
- DS Breakdown Voltage-Min :
- 40V
- Package / Case :
- PLD-1.5
- Current - Test :
- 150mA
- Voltage - Test :
- 7.5V
- Power - Output :
- 8W
- Power Dissipation-Max (Abs) :
- 62.5W
- Transistor Element Material :
- SILICON
- Current Rating (Amps) :
- 4A
- Configuration :
- Single
- Voltage - Rated :
- 40V
- JESD-609 Code :
- e3
- Published :
- 2009
- Base Part Number :
- MRF1511
- Operating Mode :
- ENHANCEMENT MODE
- HTS Code :
- 8541.29.00.75
- Transistor Type :
- LDMOS
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- MRF1511NT1
MRF1511NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF1511NT1 Description
MRF1511NT1 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF1511NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1511NT1 has the common source configuration.
MRF1511NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF1511NT1 Applications
ISM applications
DC large signal applications
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