MPS751
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- Mfr.Part #
- MPS751
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 255
- In Stock ：
- 255
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 201mg
- Number of Pins :
- 3
- Pin Count :
- 3
- Voltage - Rated DC :
- -60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- PNP
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Frequency :
- 75MHz
- Base Part Number :
- MPS751
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 75MHz
- Collector Base Voltage (VCBO) :
- -80V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Gain Bandwidth Product :
- 75MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Length :
- 4.58mm
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 75
- Published :
- 2002
- Height :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 625mW
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 625mW
- Current Rating :
- -2A
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Width :
- 3.86mm
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Datasheets
- MPS751
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor
MPS751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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