MMSTA55-7

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Mfr.Part #
MMSTA55-7
Manufacturer
Diodes Incorporated
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 60V 0.5A SC70-3
Stock
498
In Stock :
498

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Mount :
Surface Mount
Max Breakdown Voltage :
60V
Published :
2007
Emitter Base Voltage (VEBO) :
-4V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Weight :
6.010099mg
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
60V
Transition Frequency :
50MHz
Transistor Element Material :
SILICON
Width :
1.35mm
Mounting Type :
Surface Mount
Length :
2.2mm
Current - Collector Cutoff (Max) :
100nA ICBO
Pin Count :
3
Pbfree Code :
yes
Terminal Finish :
Matte Tin (Sn)
Current Rating :
-500mA
Terminal Form :
Gull wing
hFE Min :
100
Voltage - Rated DC :
-60V
Power Dissipation :
200mW
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Gain Bandwidth Product :
50MHz
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
60V
Height :
1mm
Max Collector Current :
500mA
Number of Elements :
1
Number of Terminations :
3
Element Configuration :
Single
Frequency :
50MHz
Radiation Hardening :
No
Continuous Collector Current :
-500mA
Number of Pins :
3
Base Part Number :
MMSTA55
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Package / Case :
SC-70, SOT-323
Factory Lead Time :
19 Weeks
Collector Base Voltage (VCBO) :
60V
Collector Emitter Saturation Voltage :
-250mV
JESD-609 Code :
e3
Max Power Dissipation :
200mW
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
Terminal Position :
Dual
Datasheets
MMSTA55-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated MMSTA55-7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, Base Part Number:MMSTA55, Operating Temperature:-55°C~150°C TJ, Package / Case:SC-70, SOT-323, MMSTA55-7 pinout, MMSTA55-7 datasheet PDF, MMSTA55-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated MMSTA55-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated MMSTA55-7


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MMSTA55-7-F Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at -4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 500mA volts.

MMSTA55-7-F Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MMSTA55-7-F Applications


There are a lot of Diodes Incorporated
MMSTA55-7-F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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