MMSTA42
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- Mfr.Part #
- MMSTA42
- Manufacturer
- YANGJIE
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SOT-323 NPN 0.2W 0.1A 300V Trans
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Published :
- 2007
- hFE Min :
- 25
- Factory Lead Time :
- 19 Weeks
- Collector Base Voltage (VCBO) :
- 300V
- Mount :
- Surface Mount
- Pin Count :
- 3
- Frequency :
- 50MHz
- Width :
- 1.35mm
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 3
- Weight :
- 6.010099mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 300V
- Base Part Number :
- MMSTA42
- Continuous Collector Current :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 50MHz
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 200mA
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Length :
- 2.2mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 500mV
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Current Rating :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mounting Type :
- Surface Mount
- Height :
- 1mm
- Terminal Position :
- Dual
- Datasheets
- MMSTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MMSTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMSTA42-7-F Applications
There are a lot of Diodes Incorporated
MMSTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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