MMST5401
- Mfr.Part #
- MMST5401
- Manufacturer
- YANGJIE
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SOT-323 PNP 0.2W -0.6A -160V Tra
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- -150V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- -200mA
- hFE Min :
- 60
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -150V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Max Junction Temperature (Tj) :
- 150°C
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Voltage (VCEO) :
- -150V
- Factory Lead Time :
- 19 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.2mm
- Max Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -500mV
- Current Rating :
- -200mA
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Base Part Number :
- MMST5401
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Current - Collector (Ic) (Max) :
- 200mA
- Width :
- 1.35mm
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Published :
- 2007
- Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 300MHz
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Weight :
- 6.010099mg
- Mount :
- Surface Mount
- Height :
- 1.1mm
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- -160V
- Datasheets
- MMST5401
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST5401-7-F Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-200mA).100MHz is present in the transition frequency.An input voltage of 150V volts is the breakdown voltage.Maximum collector currents can be below -200mA volts.
MMST5401-7-F Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 100MHz
MMST5401-7-F Applications
There are a lot of Diodes Incorporated
MMST5401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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