MMST5401-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Width :

1.35mm

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

-160V

Number of Pins :

3

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

-5V

Factory Lead Time :

19 Weeks

Base Part Number :

MMST5401

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Frequency :

300MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Max Breakdown Voltage :

150V

Package / Case :

SC-70, SOT-323

Mount :

Surface Mount

Max Collector Current :

-200mA

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Weight :

6.010099mg

Voltage - Rated DC :

-150V

Lead Free :

Lead Free

Current Rating :

-200mA

Max Junction Temperature (Tj) :

150°C

Height :

1.1mm

Collector Emitter Breakdown Voltage :

-150V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Pbfree Code :

yes

REACH SVHC :

No SVHC

Length :

2.2mm

Transition Frequency :

100MHz

Max Power Dissipation :

200mW

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

-150V

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

50nA ICBO

hFE Min :

60

Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Current - Collector (Ic) (Max) :

200mA

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

PNP

Published :

2007

Collector Emitter Saturation Voltage :

-500mV