MMBFJ108

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Published :

2008

Number of Elements :

1

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

-25V

Drain to Source Voltage (Vdss) :

25V

Lead Free :

Lead Free

Height :

1.22mm

Resistance - RDS(On) :

8Ohm

Operating Temperature :

-55°C~150°C TJ

Weight :

30mg

Pbfree Code :

yes

Operating Mode :

Depletion Mode

Current - Drain (Idss) @ Vds (Vgs=0) :

80mA @ 15V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

24 Weeks

Element Configuration :

Single

Radiation Hardening :

No

Power Dissipation :

350mW

Mounting Type :

Surface Mount

Contact Plating :

Tin

Base Part Number :

MBFJ108

FET Technology :

JUNCTION

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current Rating :

80mA

Drain to Source Resistance :

8Ohm

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Max Power Dissipation :

350mW

Continuous Drain Current (ID) :

80mA

Breakdown Voltage :

-25V

Number of Terminations :

3

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

3

ECCN Code :

EAR99

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Voltage - Cutoff (VGS off) @ Id :

3V @ 10nA

Voltage - Rated DC :

25V

REACH SVHC :

No SVHC