MJL4302AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

230W

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1V @ 800mA, 8A

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1V

Package / Case :

TO-264-3, TO-264AA

Factory Lead Time :

16 Weeks

Weight :

4.535924g

Frequency :

35MHz

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

350V

Length :

20.3mm

Width :

5.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5A 5V

Published :

2005

Packaging :

Tube

Transition Frequency :

35MHz

Gain Bandwidth Product :

35MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Surface Mount :

No

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Current Rating :

-15A

Voltage - Rated DC :

-350V

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Height :

26.4mm

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

350V

Number of Pins :

3

Pbfree Code :

yes

hFE Min :

80

Pin Count :

3

Current - Collector Cutoff (Max) :

100μA

Collector Base Voltage (VCBO) :

350V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Max Collector Current :

15A

Power Dissipation :

230W

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260