MJL4281AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

hFE Min :

80

Number of Pins :

3

REACH SVHC :

No SVHC

Power Dissipation :

230W

Collector Base Voltage (VCBO) :

350V

Gain Bandwidth Product :

35MHz

Width :

5.3mm

Collector Emitter Breakdown Voltage :

350V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-264-3, TO-264AA

Pin Count :

3

ECCN Code :

EAR99

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

350V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5A 5V

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

15A

Transistor Application :

AMPLIFIER

Published :

2006

Frequency :

35MHz

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 800mA, 8A

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tube

JESD-609 Code :

e3

Number of Terminations :

3

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Transition Frequency :

35MHz

Current - Collector Cutoff (Max) :

100μA

Factory Lead Time :

8 Weeks

Surface Mount :

No

Height :

26.4mm

Collector Emitter Saturation Voltage :

1V

Radiation Hardening :

No

Max Power Dissipation :

230W

Length :

20.3mm

Transistor Element Material :

SILICON

Weight :

4.535924g

Number of Elements :

1

Voltage - Rated DC :

350V

Mounting Type :

Through Hole

Element Configuration :

Single

Current Rating :

15A