MJF15030
- Mfr.Part #
- MJF15030
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 150V 8A TO220FP
- Stock
- 17,048
- In Stock :
- 17,048
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2000
- Height :
- 9.24mm
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 150V
- REACH SVHC :
- No SVHC
- Frequency :
- 30MHz
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Collector Current :
- 8A
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- Surface Mount :
- No
- Pin Count :
- 3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 2V
- Collector Emitter Voltage (VCEO) :
- 150V
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Current Rating :
- 8A
- Length :
- 10.63mm
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3 Full Pack
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 150V
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Additional Feature :
- UL RECOGNIZED
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- hFE Min :
- 20
- Mounting Type :
- Through Hole
- Power Dissipation :
- 2W
- Transition Frequency :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Terminations :
- 3
- Width :
- 4.9mm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MJF15030

NPN -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF15030G Overview
In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).30MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.
MJF15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJF15030G Applications
There are a lot of ON Semiconductor
MJF15030G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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