MJF122G
- Mfr.Part #
- MJF122G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220FP
- Stock
- 2,290
- In Stock :
- 2,290
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3 Full Pack
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 30W
- Width :
- 4.9mm
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 9.24mm
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 10μA
- Continuous Collector Current :
- 5A
- hFE Min :
- 1000
- Packaging :
- Tube
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 20mA, 5A
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Polarity :
- NPN
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 2V
- Length :
- 10.63mm
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 3V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Current Rating :
- 5A
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 100V
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 2.299997g
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Power Dissipation :
- 2W
- Additional Feature :
- UL RECOGNIZED
- Radiation Hardening :
- No
- Max Collector Current :
- 5A
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- MJF122G

NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
MJF122G Overview
DC current gain in this device equals 2000 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 20mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
MJF122G Features
the DC current gain for this device is 2000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
MJF122G Applications
There are a lot of ON Semiconductor
MJF122G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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