MGSF1N02LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

11 Weeks

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Elements :

1

Turn-Off Delay Time :

16 ns

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.75A

Terminal Position :

Dual

ECCN Code :

EAR99

Published :

2005

Width :

1.4mm

Vgs (Max) :

±20V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Current Rating :

750mA

Threshold Voltage :

1.7V

Surface Mount :

yes

Nominal Vgs :

1.7 V

Resistance :

90mOhm

Current - Continuous Drain (Id) @ 25°C :

750mA Ta

Rds On (Max) @ Id, Vgs :

90m Ω @ 1.2A, 10V

Power Dissipation :

400mW

Length :

3.04mm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pin Count :

3

Continuous Drain Current (ID) :

750mA

Height :

1.01mm

Radiation Hardening :

No

Number of Terminations :

3

Voltage - Rated DC :

20V

Rise Time :

1ns

Turn On Delay Time :

2.5 ns

Power Dissipation-Max :

400mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

20V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 5V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

1 ns

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)