MCH6337-TL-E
- Mfr.Part #
- MCH6337-TL-E
- Manufacturer
- Sanyo
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, P
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Fall Time (Typ) :
- 63 ns
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.5W
- Pin Count :
- 6
- Height :
- 850μm
- Vgs (Max) :
- ±10V
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 69 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation-Max :
- 1.5W Ta
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 4.5A
- Resistance :
- 49mOhm
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 3A, 4.5V
- JESD-609 Code :
- e6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2mm
- Width :
- 1.6mm
- Published :
- 2012
- Vgs(th) (Max) @ Id :
- 1.3V @ 1mA
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Gate Charge (Qg) (Max) @ Vgs :
- 7.3nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 10V
- Rise Time :
- 45ns
- Gate to Source Voltage (Vgs) :
- 10V
- Package / Case :
- 6-SMD, Flat Leads
- Turn On Delay Time :
- 8.4 ns
- Drain to Source Breakdown Voltage :
- -20V
- Number of Pins :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Datasheets
- MCH6337-TL-E

P-Channel Tape & Reel (TR) 49m Ω @ 3A, 4.5V ±10V 670pF @ 10V 7.3nC @ 4.5V 20V 6-SMD, Flat Leads
MCH6337-TL-E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 670pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.5A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.It is [69 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
MCH6337-TL-E Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 69 ns
a 20V drain to source voltage (Vdss)
MCH6337-TL-E Applications
There are a lot of ON Semiconductor
MCH6337-TL-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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