MBR12030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Forward Voltage :

650mV

HTS Code :

8541.10.00.80

Diode Configuration :

1 Pair Common Anode

Number of Contacts :

6

Application :

Power

Package / Case :

Twin Tower

Current - Reverse Leakage @ Vr :

3mA @ 20V

Terminal Form :

UNSPECIFIED

Orientation :

RIGHT ANGLE

Number of Phases :

1

Packaging :

Bulk

Number of Pins :

2

Termination :

Solder

Pitch :

2mm

Current - Average Rectified (Io) :

120A DC

Max Repetitive Reverse Voltage (Vrrm) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

Element Configuration :

Common Anode

Max Reverse Leakage Current :

1μA

Min Operating Temperature :

-40°C

Number of Elements :

2

Forward Current :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Contact Resistance :

20mOhm

Diode Type :

Schottky

Peak Reverse Current :

1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Average Rectified Current :

120A

Max Surge Current :

800A

Published :

2003

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Pbfree Code :

yes

Operating Temperature - Junction :

-55°C~150°C

Voltage - Forward (Vf) (Max) @ If :

650mV @ 60A

Diode Element Material :

SILICON

Max Reverse Voltage (DC) :

30V

Mount :

Chassis Mount, Through Hole

Max Operating Temperature :

175°C