MBR12030CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

Peak Reverse Current :

1A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Published :

2012

Max Repetitive Reverse Voltage (Vrrm) :

30V

Max Forward Surge Current (Ifsm) :

800A

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Terminal Form :

UNSPECIFIED

Number of Phases :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Application :

Power

Forward Voltage :

650mV

Diode Configuration :

1 Pair Common Cathode

Diode Element Material :

SILICON

Average Rectified Current :

120A

Termination :

Solder

Element Configuration :

Common Cathode

Max Operating Temperature :

175°C

REACH SVHC :

No SVHC

Packaging :

Bulk

Operating Temperature - Junction :

-55°C~150°C

Diode Type :

Schottky

Voltage - Forward (Vf) (Max) @ If :

650mV @ 60A

Current - Average Rectified (Io) :

120A DC

Min Operating Temperature :

-40°C

Number of Pins :

2

Forward Current :

60A

Current - Reverse Leakage @ Vr :

3mA @ 20V

Max Surge Current :

800A

Max Reverse Voltage (DC) :

30V

Package / Case :

Twin Tower

Contact Resistance :

20mOhm

Mounting Type :

Chassis Mount

Orientation :

RIGHT ANGLE

Number of Contacts :

5

Number of Terminations :

2

Factory Lead Time :

6 Weeks

Mount :

Chassis Mount, Through Hole

Pbfree Code :

yes

Pitch :

2mm

Terminal Position :

UPPER