MBR12020CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Current - Average Rectified (Io) :

120A DC

Max Forward Surge Current (Ifsm) :

800A

Operating Temperature - Junction :

-55°C~150°C

Max Reverse Leakage Current :

1μA

Number of Phases :

1

Mount :

Chassis Mount

Element Configuration :

Common Anode

Number of Pins :

2

Min Operating Temperature :

-40°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Current :

60A

Packaging :

Bulk

Forward Voltage :

650mV

Number of Terminations :

2

Published :

2012

Max Repetitive Reverse Voltage (Vrrm) :

20V

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Diode Element Material :

SILICON

Max Operating Temperature :

175°C

Factory Lead Time :

6 Weeks

Average Rectified Current :

120A

Mounting Type :

Chassis Mount

HTS Code :

8541.10.00.80

Terminal Position :

UPPER

Max Reverse Voltage (DC) :

20V

Diode Type :

Schottky

Peak Reverse Current :

1A

Current - Reverse Leakage @ Vr :

3mA @ 20V

Diode Configuration :

1 Pair Common Anode

Pbfree Code :

yes

Voltage - Forward (Vf) (Max) @ If :

650mV @ 120A

Terminal Form :

UNSPECIFIED

REACH SVHC :

No SVHC

Application :

Power

RoHS Status :

RoHS Compliant

Package / Case :

Twin Tower

Max Surge Current :

800A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99