M29W800DB45N6E

Manufacturer :

Micron Technology

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Memory Interface :

Parallel

Density :

8 Mb

Memory Size :

8Mb 1M x 8 512K x 16

Published :

2008

Write Cycle Time - Word, Page :

45ns

Toggle Bit :

yes

Standby Current-Max :

0.0001A

Number of Pins :

48

Nominal Supply Current :

10mA

Sector Size :

16K8K32K64K

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

MATTE TIN

Command User Interface :

yes

Mounting Type :

Surface Mount

Surface Mount :

yes

Supply Voltage :

3.3V

Pin Count :

48

Radiation Hardening :

No

HTS Code :

8542.32.00.51

Access Time (Max) :

45 ns

Common Flash Interface :

yes

Packaging :

Tray

Alternate Memory Width :

8

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Memory Width :

16

Sync/Async :

ASYNCHRONOUS

Peak Reflow Temperature (Cel) :

260

Number of Sectors/Size :

12115

Boot Block :

BOTTOM

Height Seated (Max) :

1.2mm

Factory Lead Time :

20 Weeks

Ready/Busy :

yes

Number of Functions :

1

Voltage - Supply :

2.7V~3.6V

Voltage :

2.7V

Length :

18.4mm

Terminal Position :

Dual

Pbfree Code :

yes

REACH SVHC :

No SVHC

Additional Feature :

BOTTOM BOOT BLOCK

Base Part Number :

M29W800

Terminal Pitch :

0.5mm

Operating Temperature :

-40°C~85°C TA

Data Polling :

yes

Width :

12mm

JESD-609 Code :

e3

Organization :

512KX16

Power Supplies :

3.3V

Memory Type :

Non-Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Termination :

SMD/SMT

Memory Format :

Flash

Number of Terminations :

48