M29W640GT70NB6E
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- Mfr.Part #
- M29W640GT70NB6E
- Manufacturer
- Micron Technology
- Package / Case
- 56-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 64MBIT PARALLEL 56TSOP
- Stock
- 47,280
- In Stock ：
- 47,280
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Ready/Busy :
- yes
- Pbfree Code :
- yes
- HTS Code :
- 8542.32.00.51
- Command User Interface :
- yes
- Alternate Memory Width :
- 8
- Supply Current-Max :
- 0.02mA
- RoHS Status :
- ROHS3 Compliant
- Power Supplies :
- 3/3.3V
- Data Polling :
- yes
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Density :
- 64 Mb
- Surface Mount :
- yes
- Toggle Bit :
- yes
- Standby Current-Max :
- 0.0001A
- Height Seated (Max) :
- 1.2mm
- Pin Count :
- 56
- Width :
- 14mm
- Sector Size :
- 8K64K
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Memory Type :
- Non-Volatile
- Boot Block :
- Top
- Voltage - Supply :
- 2.7V~3.6V
- Operating Temperature :
- -40°C~85°C TA
- Package / Case :
- 56-TFSOP (0.724, 18.40mm Width)
- Radiation Hardening :
- No
- Common Flash Interface :
- yes
- Voltage :
- 2.7V
- Terminal Pitch :
- 0.5mm
- Number of Functions :
- 1
- Packaging :
- Tray
- Number of Pins :
- 56
- Write Cycle Time - Word, Page :
- 70ns
- Memory Width :
- 16
- Published :
- 2013
- Access Time (Max) :
- 70 ns
- Page Size :
- 4/8words
- ECCN Code :
- 3A991.B.1.A
- Organization :
- 4MX16
- Supply Voltage :
- 3V
- Memory Interface :
- Parallel
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 18.4mm
- Memory Format :
- Flash
- Additional Feature :
- TOP BOOT BLOCK
- Memory Size :
- 64Mb 8M x 8 4M x 16
- JESD-609 Code :
- e3
- Base Part Number :
- M29W640
- Number of Terminations :
- 56
- Number of Sectors/Size :
- 8127
- Terminal Position :
- Dual
- Terminal Finish :
- MATTE TIN
- Datasheets
- M29W640GT70NB6E
Memory Micron Technology M29W640GT70NB6E Overview
The Memory Micron Technology M29W640GT70NB6E is a high-performance 64Mbit flash memory device, integrating state-of-the-art flash technology into a compact 56TSOP package. This product offers a parallel interface, providing a practical blend of speed and reliability, making it an ideal choice for sophisticated, high-memory-demand applications. Designed by Micron Technology, a leader in integrated circuit innovation, this IC flash memory unit is tailored to meet rigorous performance and durability standards. It stands out in the market for its robust data retention and endurance capabilities, positioning itself as a cornerstone for developing advanced electronic systems.
M29W640GT70NB6E Features
The M29W640GT70NB6E boasts several key features making it highly suitable for a wide range of applications. It features a 64Mbit memory capacity, which is essential for systems requiring substantial data storage without compromising physical space. The use of a parallel interface facilitates faster data access compared to serial alternatives, supporting more efficient operation of applications. Furthermore, its packaging in a 56TSOP format ensures compatibility with standard board layouts, easing integration challenges.
M29W640GT70NB6E Applications
- Consumer Electronics: Utilized in devices such as digital cameras and audio players where large, non-volatile storage is crucial for user data and device settings.
- Automotive Systems: Applies in car entertainment and navigation systems, offering reliable performance under varying environmental conditions.
- Telecommunication: Serves in telecommunications infrastructure, such as switch routers and modems, where data integrity and speed are paramount.
- Industrial Control: Used in industrial automation systems, including PLCs, providing the memory required for process control applications that demand high-speed, reliable data logging and storage.
- Medical Devices: Essential in medical monitoring systems, where precise and rapid access to data ensures effective patient care and device functionality.
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