M29W640GL70NB6E

Manufacturer :

Micron Technology

Product Category :

Memory

Height Seated (Max) :

1.2mm

Additional Feature :

TOP BOOT BLOCK

Length :

18.4mm

Number of Terminations :

56

Width :

14mm

Voltage :

2.7V

Ready/Busy :

yes

Number of Functions :

1

Command User Interface :

yes

HTS Code :

8542.32.00.51

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Organization :

4MX16

Mounting Type :

Surface Mount

Packaging :

Tray

Memory Interface :

Parallel

Voltage - Supply :

2.7V~3.6V

Peak Reflow Temperature (Cel) :

260

Memory Format :

Flash

Operating Temperature :

-40°C~85°C TA

Terminal Position :

Dual

Memory Width :

16

RoHS Status :

ROHS3 Compliant

Number of Sectors/Size :

128

Memory Type :

Non-Volatile

Alternate Memory Width :

8

Base Part Number :

M29W640

Power Supplies :

3/3.3V

Page Size :

4/8words

ECCN Code :

3A991.B.1.A

Sync/Async :

ASYNCHRONOUS

Lead Free :

Lead Free

Number of Pins :

56

Data Polling :

yes

Supply Voltage :

3V

Toggle Bit :

yes

Write Cycle Time - Word, Page :

70ns

Standby Current-Max :

0.0001A

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2009

Common Flash Interface :

yes

Pin Count :

56

Access Time (Max) :

70 ns

Nominal Supply Current :

10mA

Radiation Hardening :

No

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

JESD-609 Code :

e3

Sector Size :

64K

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.5mm

Memory Size :

64Mb 8M x 8 4M x 16

Surface Mount :

yes

Density :

64 Mb