M29W640GL70NB6E
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- Mfr.Part #
- M29W640GL70NB6E
- Manufacturer
- Micron Technology
- Package / Case
- 56-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 64MBIT PARALLEL 56TSOP
- Stock
- 5,040
- In Stock ：
- 5,040
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Nominal Supply Current :
- 10mA
- Sync/Async :
- ASYNCHRONOUS
- Published :
- 2009
- Number of Functions :
- 1
- Number of Pins :
- 56
- Memory Format :
- Flash
- Alternate Memory Width :
- 8
- JESD-609 Code :
- e3
- Standby Current-Max :
- 0.0001A
- Data Polling :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- HTS Code :
- 8542.32.00.51
- Height Seated (Max) :
- 1.2mm
- Common Flash Interface :
- yes
- Supply Voltage :
- 3V
- Toggle Bit :
- yes
- Additional Feature :
- TOP BOOT BLOCK
- Sector Size :
- 64K
- Width :
- 14mm
- Access Time (Max) :
- 70 ns
- RoHS Status :
- ROHS3 Compliant
- Page Size :
- 4/8words
- Voltage - Supply :
- 2.7V~3.6V
- Pbfree Code :
- yes
- ECCN Code :
- 3A991.B.1.A
- Terminal Finish :
- MATTE TIN
- Number of Sectors/Size :
- 128
- Operating Temperature :
- -40°C~85°C TA
- Terminal Pitch :
- 0.5mm
- Organization :
- 4MX16
- Memory Interface :
- Parallel
- Peak Reflow Temperature (Cel) :
- 260
- Memory Type :
- Non-Volatile
- Lead Free :
- Lead Free
- Power Supplies :
- 3/3.3V
- Mounting Type :
- Surface Mount
- Write Cycle Time - Word, Page :
- 70ns
- Voltage :
- 2.7V
- Density :
- 64 Mb
- Packaging :
- Tray
- Ready/Busy :
- yes
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Memory Width :
- 16
- Length :
- 18.4mm
- Number of Terminations :
- 56
- Package / Case :
- 56-TFSOP (0.724, 18.40mm Width)
- Base Part Number :
- M29W640
- Command User Interface :
- yes
- Terminal Position :
- Dual
- Memory Size :
- 64Mb 8M x 8 4M x 16
- Pin Count :
- 56
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- M29W640GL70NB6E
M29W640GL70NB6E Documents
Memory Micron Technology M29W640GL70NB6E Overview
Introducing the Memory Micron Technology M29W640GL70NB6E, a robust 64Mbit flash memory device engineered by Micron Technology. This high-performance IC operates on a parallel interface encapsulated in a 56TSOP package, designed for high-speed and reliable data storage. Its significant storage capacity and durability make it an ideal choice for demanding applications requiring rapid access to large amounts of non-volatile memory. The compact form factor of the 56TSOP also ensures that this memory can be integrated into a variety of hardware setups without compromising on space or power consumption.
M29W640GL70NB6E Features
- High Density: 64Mbit of memory allows for ample storage of code and data.
- Parallel Interface: Ensures fast data transfer rates that are essential for high-speed operations and real-time applications.
- TSOP Packaging: The 56-pin Thin Small Outline Package (TSOP) offers a space-efficient design, making it easier to accommodate in compact systems.
- Durability: Designed to withstand intense operational environments, ensuring data integrity and reliability.
M29W640GL70NB6E Applications
- Automotive Electronics: Used in engine control units and infotainment systems to store firmware that manages vehicle operations and provides user interface functionalities.
- Communication Equipment: Essential for storing firmware and configuration data in modems and routers, facilitating stable and efficient network management.
- Consumer Electronics: Integrated into devices such as digital cameras and gaming consoles where large amounts of fast-access memory are critical for user experience.
- Industrial Control Systems: Provides the memory necessary for controlling and monitoring equipment in industrial environments, ensuring reliable and robust machine operation.
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