M29W400DB55N6E

Manufacturer :

Micron Technology

Product Category :

Memory

Radiation Hardening :

No

Terminal Position :

Dual

Number of Terminations :

48

Surface Mount :

yes

Ready/Busy :

yes

Supply Voltage :

3.3V

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

ECCN Code :

EAR99

Write Cycle Time - Word, Page :

55ns

Termination :

SMD/SMT

Number of Sectors/Size :

1217

Voltage :

2.7V

HTS Code :

8542.32.00.51

Additional Feature :

BOTTOM BOOT BLOCK

Mounting Type :

Surface Mount

Command User Interface :

yes

RoHS Status :

ROHS3 Compliant

Memory Format :

Flash

Time@Peak Reflow Temperature-Max (s) :

30

Number of Functions :

1

Memory Interface :

Parallel

Base Part Number :

M29W400

Height Seated (Max) :

1.2mm

Sector Size :

16K8K32K64K

Terminal Finish :

Matte Tin (Sn)

Boot Block :

BOTTOM

Density :

4 Mb

Pin Count :

48

Packaging :

Tray

Organization :

256KX16

Memory Type :

Non-Volatile

Power Supplies :

3/3.3V

Voltage - Supply :

2.7V~3.6V

Operating Temperature :

-40°C~85°C TA

REACH SVHC :

No SVHC

Width :

12mm

Data Polling :

yes

Memory Width :

16

Sync/Async :

ASYNCHRONOUS

Published :

2004

Memory Size :

4Mb 512K x 8 256K x 16

Toggle Bit :

yes

Peak Reflow Temperature (Cel) :

260

Nominal Supply Current :

10mA

Length :

18.4mm

Number of Pins :

48

Terminal Pitch :

0.5mm

Pbfree Code :

yes

Alternate Memory Width :

8

JESD-609 Code :

e3

Standby Current-Max :

0.0001A

Access Time (Max) :

55 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)