M29W200BB90N6
- Mfr.Part #
- M29W200BB90N6
- Manufacturer
- STMicroelectronics
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 2MBIT PARALLEL 48TSOP
- Stock
- 17,914
- In Stock :
- 17,914
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Memory
- Boot Block :
- BOTTOM
- Height Seated (Max) :
- 1.2mm
- Data Polling :
- yes
- JESD-609 Code :
- e0
- Data Bus Width :
- 16b
- Memory Density :
- 2097152 bit
- Command User Interface :
- yes
- Mounting Type :
- Surface Mount
- Packaging :
- Tray
- Sector Size :
- 16K8K32K64K
- Ready/Busy :
- yes
- ECCN Code :
- EAR99
- Organization :
- 128KX16
- Supply Voltage-Max (Vsup) :
- 3.6V
- Supply Voltage :
- 3.3V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 48
- RoHS Status :
- ROHS3 Compliant
- Toggle Bit :
- yes
- Operating Mode :
- ASYNCHRONOUS
- Memory Width :
- 16
- Memory Format :
- Flash
- Supply Current-Max :
- 0.02mA
- Number of Functions :
- 1
- Memory Size :
- 2Mb 256K x 8 128K x 16
- Standby Current-Max :
- 0.0001A
- Additional Feature :
- BOTTOM BOOT BLOCK
- Memory Type :
- Non-Volatile
- Access Time (Max) :
- 90 ns
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Programming Voltage :
- 2.7V
- Pin Count :
- 48
- Terminal Pitch :
- 0.5mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Supply :
- 2.7V~3.6V
- Terminal Position :
- Dual
- Length :
- 20mm
- Number of Sectors/Size :
- 1213
- Power Supplies :
- 3/3.3V
- Supply Voltage-Min (Vsup) :
- 2.7V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Alternate Memory Width :
- 8
- Number of Pins :
- 48
- Memory Interface :
- Parallel
- HTS Code :
- 8542.32.00.51
- Endurance :
- 100000 Write/Erase Cycles
- Operating Temperature :
- -40°C~85°C TA
- Surface Mount :
- yes
- Base Part Number :
- M29W200
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Finish :
- TIN LEAD
- Write Cycle Time - Word, Page :
- 90ns
- Datasheets
- M29W200BB90N6
Memory STMicroelectronics M29W200BB90N6 Overview
The Memory STMicroelectronics M29W200BB90N6 is a high-performance 2Mbit FLASH memory chip that utilizes a parallel interface for rapid data access and programming. This product, housed in a compact 48TSOP package, is engineered by STMicroelectronics, a leader in semiconductor innovation. The IC is designed for applications requiring fast and reliable non-volatile memory storage. Its robust design ensures high durability and stable performance under a wide range of environmental conditions, making it an ideal choice for demanding industrial applications. With its considerable storage capacity and efficient operation, the Memory STMicroelectronics M29W200BB90N6 is crafted to meet the rigorous demands of modern electronic systems, ensuring data integrity and quick access when needed.
M29W200BB90N6 Features
This FLASH memory IC features a 2Mbit capacity with a parallel interface that ensures high-speed read and write operations. The 48TSOP package is not only space-efficient but also offers excellent thermal stability and protection against physical stress. Additionally, it supports a wide voltage range, making it versatile for various operating environments.
M29W200BB90N6 Applications
- Embedded Systems: Utilized in the core memory functions of embedded systems, providing the necessary boot and operational code storage that these systems rely on for efficient performance.
- Consumer Electronics: Employed in consumer electronics such as digital cameras and MP3 players, where reliable and fast memory is crucial for user interface and functionality enhancements.
- Automotive Electronics: Integrated into automotive systems for storing firmware that controls engine functions, dashboard readouts, and infotainment systems, enhancing both performance and reliability.
- Telecommunication Infrastructure: Used in telecommunications equipment for firmware storage, aiding in the management and operation of network hardware to ensure smooth and efficient communication services.
- Industrial Control Systems: Essential for industrial applications requiring robust memory solutions that can withstand extreme conditions while controlling machinery and industrial processes.
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