LET20030C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

80V

ECCN Code :

EAR99

Power - Output :

45W

Min Operating Temperature :

-65°C

Configuration :

Single

Transistor Application :

AMPLIFIER

Pin Count :

2

Base Part Number :

LET20030

Drain to Source Voltage (Vdss) :

75V

JESD-30 Code :

R-PDFM-F2

Lead Free :

Lead Free

Mount :

Screw

Number of Pins :

3

Continuous Drain Current (ID) :

9A

Current Rating :

9A

Current - Test :

400mA

Terminal Form :

Flat

Case Connection :

SOURCE

Max Power Dissipation :

108W

Terminal Position :

Dual

Voltage - Test :

28V

Package / Case :

M243

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

65V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

200°C

Number of Terminations :

2

Number of Elements :

1

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

4A

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk

Noise Figure :

13.9 dB

Frequency :

2GHz