LET20030C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Packaging :

Bulk

Lead Free :

Lead Free

Min Operating Temperature :

-65°C

Frequency :

2GHz

Case Connection :

SOURCE

Package / Case :

M243

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

4A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Voltage - Test :

28V

Number of Pins :

3

Drain to Source Voltage (Vdss) :

75V

Power - Output :

45W

Operating Mode :

ENHANCEMENT MODE

Noise Figure :

13.9 dB

JESD-30 Code :

R-PDFM-F2

Current Rating :

9A

Base Part Number :

LET20030

Radiation Hardening :

No

Continuous Drain Current (ID) :

9A

Max Operating Temperature :

200°C

Max Power Dissipation :

108W

Pin Count :

2

Terminal Form :

Flat

Transistor Type :

LDMOS

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

80V

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

400mA

DS Breakdown Voltage-Min :

65V

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Mount :

Screw

Configuration :

Single