LET20030C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-30 Code :

R-PDFM-F2

Min Operating Temperature :

-65°C

Voltage - Test :

28V

Gate to Source Voltage (Vgs) :

80V

Packaging :

Bulk

ECCN Code :

EAR99

Case Connection :

SOURCE

Base Part Number :

LET20030

Number of Terminations :

2

Max Operating Temperature :

200°C

Current - Test :

400mA

Continuous Drain Current (ID) :

9A

Radiation Hardening :

No

Transistor Type :

LDMOS

Mount :

Screw

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

108W

Number of Pins :

3

Noise Figure :

13.9 dB

Package / Case :

M243

DS Breakdown Voltage-Min :

65V

Power - Output :

45W

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pin Count :

2

Drain Current-Max (Abs) (ID) :

4A

Frequency :

2GHz

Drain to Source Voltage (Vdss) :

75V

Polarity/Channel Type :

N-Channel

Current Rating :

9A

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single