KST06MTF
- Mfr.Part #
- KST06MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 1,270
- In Stock :
- 1,270
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- hFE Min :
- 50
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Current Rating :
- 500mA
- Published :
- 2002
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 350mW
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Max Breakdown Voltage :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Height :
- 970μm
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Element Configuration :
- Single
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Base Part Number :
- KST06
- Number of Terminations :
- 3
- Power Dissipation :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- KST06MTF

NPN 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST06MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
KST06MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KST06MTF Applications
There are a lot of ON Semiconductor
KST06MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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