KST05MTF
- Mfr.Part #
- KST05MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 56,870
- In Stock :
- 56,870
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 250mV
- Power Dissipation :
- 350mW
- Current - Collector Cutoff (Max) :
- 100nA
- Max Operating Temperature :
- 150°C
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Weight :
- 30mg
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Published :
- 2008
- Terminal Position :
- Dual
- hFE Min :
- 50
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Base Part Number :
- KST05
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Datasheets
- KST05MTF

NPN 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST05MTF Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KST05MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KST05MTF Applications
There are a lot of ON Semiconductor
KST05MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| KST05MTF | Fairchild Semiconductor | 56,870 | TRANS NPN 60V 0.5A SOT23-3 |
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| KST06MTF-FS | Fairchild Semiconductor | 30,422 | TRANS NPN 80V 0.5A SOT23-3 |
















