KSH45H11TF
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- Mfr.Part #
- KSH45H11TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A DPAK
- Stock
- 4,614
- In Stock ：
- 4,614
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- PNP
- Max Collector Current :
- 8A
- Current - Collector Cutoff (Max) :
- 10μA
- Lead Free :
- Lead Free
- Base Part Number :
- KSH45H11
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 60
- Power Dissipation :
- 1.75W
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Frequency :
- 40MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -80V
- Max Power Dissipation :
- 1.75W
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Transition Frequency :
- 40MHz
- Gain Bandwidth Product :
- 40MHz
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- -1V
- Number of Terminations :
- 2
- Collector Base Voltage (VCBO) :
- -80V
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Weight :
- 260.37mg
- Current Rating :
- -8A
- Datasheets
- KSH45H11TF
PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH45H11TF Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 8A volts.
KSH45H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11TF Applications
There are a lot of ON Semiconductor
KSH45H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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